Novel Transistor Designs for Photovoltaic Material Characterization
- Program: Electrical and Computer Engineering
- Course: Other
Project Description:
Analyzing the different electrical properties of semiconductors in photovoltaic devices is critical in achieving highly efficient device performance. For solar cell applications, Lead-Sulfifde (PbS) Colloidal Quantum Dots (CQDs) have emerged as a promising material due to their tunable bandgap energy. This feature allows quantum dots to absorb different wavelengths of light from the solar spectrum, overcoming a limit posed by current Silicon cells. Field Effect Transistors (FETs) provide an avenue for semiconductor characterization through transconductance measurements. This project explores the fabrication of quantum dot field effect transistors which are then used to characterize PbS CQD films with Ethanedithiol (EDT) ligands. Two FET architectures – vertical and planar – are fabricated and tested, each providing unique insights toward further quantum dot film optimization.
Project Photo:
Two lateral PbS-EDT Colloidal Quantum Dot field effect transistors